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Article Processing Charges (APCs)Asia Pacific Academy of Science Pte. Ltd. publishes all its journals in Gold Open Access format. In order to defray our editorial and production costs, authors of the accepted articles are required to pay an article processing charge (APC) of USD 800. The charges will come from authors' institutes or research funding bodies. MI receives financial support from Beijing Chuncheng Education Publications Research Center, hence there is no article processing charge (APC) or fees payable for article publication for the time being. APC PaymentPayments for APC of this journal can be made through our online PayPal payment gateway. Enter the article no. into the below textbox and select "Pay Now" to proceed with payment. *Article No. is mandatory for payment and it can be found on the acceptance letter issued by the Editorial Office. Payment without indicating Article No. will result in processing problem and delay in article processing. Please note that payments will be processed in USD. You can make payment through Masters, Visa or UnionPay card. |
Latest Articles
by
Ekaterina Anatolyevna Bogdanova, Vladimir Mikhailovich Skachkov
Micromat. Interf.
2023
,
1(1);
Abstract
The article discusses the possibility of obtaining a hardened composite material with a structure of different porosity based on nanostructured hydroxyapatite synthesized by precipitation from solution. In this work, mechanochemical synthesis of composite materials based on hydroxyapatite was carried out in a vibrating mill with simultaneous mixing and grinding of initial components and property-modifying additives (Si, Al, Zr, SiO 2 , Al 2 O 3 , ZrO 2 , 10–20 wt.% each) followed by annealing in the temperature range 200 ℃–1000 ℃. The synthesized samples were certified using modern physico-chemical methods of analysis. The influence of the qualitative and quantitative composition of the composite on the sintering processes, porosity, strength characteristics, degree of dispersion and morphology of the studied samples was shown. The peculiarities of chemical interaction of hydroxyapatite with reinforcing additives during heat treatment, the effect on grain size, and changes in the properties and structure during annealing were revealed. The effect of the phase composition and the amount of introduced additives on the strength characteristics of the investigated samples was shown. The optimum amount of reinforcing additives providing the production of a dense and strong composite material was determined.
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by
M. Mumtaz, Mubasher Mubasher, Liaqat Ali, Mehwish Hassan, Abrar A. Khan, Haris Ahmed Abbasi, M. Nasir Khan
Micromat. Interf.
2023
,
1(1);
Abstract
This study elucidates influence of silver (Ag) nanoparticles (NPs) on ac-conduction properties within the super conductive phase of Cu 0.5 Tl 0.5 Ba 2 Ca 2 Cu 3 O 10−δ (CuTl-1223). The Ag NPs were prepared by sol-gel method and CuTl-1223 superconducting phase was prepared by conventional solid-state reaction method. The different weight percentages (wt.%) of Ag NPs were mixed with CuTl-1223 superconducting matrix in order to obtain (Ag) x /CuTl-1223; x = 0 ~ 4.0 wt.% nanoparticles-superconductor composites. Complex impedance spectroscopy (CIS) and complex electric modulus spectroscopy (CEMS) were conducted to probe the impact of Ag NPs addition along the grain-boundaries of the bulk CuTl-1223 superconducting matrix and on the resistive and capacitive contributions to the total impedance at different T (K) and f (Hz) values.
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by
Saeed Reza Hormozi Jangi
Micromat. Interf.
2023
,
1(1);
Abstract
Despite the well-known concepts on the intrinsic peroxidase-like activity of MnO 2 nanoparticles, up to date, their biochemical and kinetics characteristics were not investigated, especially, the current information about their performances toward n -electron oxidation of 3, 3′-diaminobezedine for producing indamine polymers is on limitation. Therefore, herein, the MnO 2 nanoparticles were synthesized by a simple low-cost co-precipitation method and then characterized by XRD, SEM, and DLS analysis. Besides, their peroxidase-like activity was evaluated upon standard peroxidase enzyme assay, revealing high intrinsic peroxidase-like activity for the as-mentioned MnO 2 nanozymes. Considering their high intrinsic peroxidase-like activity, their optimal biochemical characteristics were quantified by probing the progress of n -electron irreversible oxidation of 3, 3′-diaminobezedine in the presence of MnO 2 nanozymes as peroxidase mimics. The maximal activity of the as-mentioned MnO 2 nanoparticles with high intrinsic peroxidase-like activity was observed when the pH and temperature of the reaction media were fixed over 3.0–6.0 and 23 ℃–25 ℃, in order, revealing very high pH and thermal stability of the as-prepared nanoparticles. The salt stability of these nanoparticles was also checked using NaCl as model salt, revealing that the nanozymatic activity was stable over a salt concentration as high as 3–7 M. In addition, the affinity constant (K m ) and maximum velocity of the nanozyme-catalyzed oxidation of 3, 3′-diaminobezedine were found to be 1.6 mM and 47 nM sec − 1 , in turn.
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by
P. R. Sekhar Reddy
Micromat. Interf.
2023
,
1(1);
Abstract
In this study, Zr-doped HfO 2 (HZO) based resistive random-access memory (RRAM) device were fabricated. The Hf:Zr (1:1) ratio in the HZO films were controlled by changing the HfO 2 and ZrO 2 cycle ratio during the atomic layer deposition (ALD) process. Next, we studied the structural and electrical properties of the Au/HZO/TiN RRAM device structure. The RRAM devices exhibits an excellent resistance ratio of the high resistance state (HRS) to the low resistance state (LRS) of ~10 3 A, and as well as good endurance (300 cycles) and retention (>10 3 s), respectively. Further, the device showed different conduction mechanism in LRS and HRS modes. The lower biased linear region is dominated by ohmic conductivity, whereas the higher biased nonlinear region is dominated by a space charge limited current conduction. This device is suitable for application in future high-density nonvolatile memory RRAM devices.
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