Structural and electrical characteristics of Zr-doped HfO2 (HZO) thin films deposited by atomic layer deposition for RRAM applications
Vol 1, Issue 1, 2023
VIEWS - 153 (Abstract)
Abstract
In this study, Zr-doped HfO2 (HZO) based resistive random-access memory (RRAM) device were fabricated. The Hf:Zr (1:1) ratio in the HZO films were controlled by changing the HfO2 and ZrO2 cycle ratio during the atomic layer deposition (ALD) process. Next, we studied the structural and electrical properties of the Au/HZO/TiN RRAM device structure. The RRAM devices exhibits an excellent resistance ratio of the high resistance state (HRS) to the low resistance state (LRS) of ~103 A, and as well as good endurance (300 cycles) and retention (>103 s), respectively. Further, the device showed different conduction mechanism in LRS and HRS modes. The lower biased linear region is dominated by ohmic conductivity, whereas the higher biased nonlinear region is dominated by a space charge limited current conduction. This device is suitable for application in future high-density nonvolatile memory RRAM devices.
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1. Mahata C, Kang M, Kim S. Multi-level analog resistive switching characteristics in tri-layer HfO2/Al2O3/HfO2 based memristor on ITO electrode. Nanomaterials 2020; 10(10): 2069. doi: 10.3390/nano10102069
2. Li Y, Long S, Zhang M, et al. Resistive switching properties of Au/ZrO2/Ag structure for low-voltage nonvolatile memory applications. IEEE Electron Device Letters 2009; 31(2): 117–119. doi: 10.1109/LED.2009.2036276
3. Napolean A, Sivamangai NM, Rajesh S, et al. Review on role of nanoscale HfO2 switching material in resistive random access memory device. Emergent Materials 2022; 5: 489–508. doi: 10.1007/s42247-022-00356-0
4. Lee SY, Chang J, Choi J, et al. Investigation of ultrathin Pt/ZrO2–Al2O3–ZrO2/TiN DRAM capacitors Schottky barrier height by internal photoemission spectroscopy. Current Applied Physics 2017; 17(2): 267–271. doi: 10.1016/j.cap.2016.12.004
5. Wang ZJ, Bai Y. Resistive switching behavior in ferroelectric heterostructures. Small 2019; 15(32): 1805088 doi: 10.1002/smll.201805088
6. Kim S, Jeong HY, Choi SY, Choi YK. Comprehensive modeling of resistive switching in the Al/TiOx/TiO2/Al heterostructure based on space-charge-limited conduction. Applied Physics Letters 2010; 97(3): 033508. doi: 10.1063/1.3467461
7. Wang Z, Wu H, Burr GW, et al. Resistive switching materials for information processing. Nature Reviews Materials 2020; 5(3): 173–195. doi: 10.1038/s41578-019-0159-3
8. Ielmini D. Resistive switching memories based on metal oxides: Mechanisms, reliability and scaling. Semiconductor Science and Technology 2016; 31(6): 063002. doi: 10.1088/0268-1242/31/6/063002
9. Xiao Z, Kisslinger K, Chance S, et al. Comparison of hafnium dioxide and zirconium dioxide grown by plasma-enhanced atomic layer deposition for the application of electronic materials. Crystals 2020; 10(2): 136. doi: 10.3390/cryst10020136
10. Li Y, Long S, Lv H, et al. Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer. Nanotechnology 2011; 22(25): 254028. doi: 10.1088/0957-4484/22/25/254028
11. Wu Z, Zhu J, Zhou Y, Liu X. Bipolar resistive switching properties of Hf0.5Zr0.5O2 thin film for flexible memory applications. Physica Status Solidi (A) 2018; 215(1): 1700396. doi: 10.1002/pssa.201700396
12. Ryu SW, Cho S, Park J, et al. Effects of ZrO2 doping on HfO2 resistive switching memory characteristics. Applied Physics Letters 2014; 105(7): 072102. doi: 10.1063/1.4893568
13. Huang CY, Huang CY, Tsai TL, et al. Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance. Applied Physics Letters 2014; 104(6): 062901. doi: 10.1063/1.4864396
14. Yan X, Xiao Z, Lu C. Characteristic investigation of highly oriented Hf0.5Zr0.5O2 thin-film resistive memory devices. Applied Physics Letters 2020; 116(1): 013506. doi: 10.1063/1.5141132
15. Sekhar Reddy PR, Janardhanam V, Rajagopal Reddy V, et al. Effects of rapid thermal annealing on the structural, optical, and electrical properties of Au/CuPc/n-Si (MPS)-type Schottky barrier diodes. Applied Physics A 2021; 127(10): 803. doi: 10.1007/s00339-021-04945-4
16. Mikhaylov AN, Belov AI, Guseinov DV, et al. Bipolar resistive switching and charge transport in silicon oxide memristor. Materials Science and Engineering: B 2015; 194: 48–54. doi: 10.1016/j.mseb.2014.12.029
17. Lim EW, Ismail R. Conduction mechanism of valence change resistive switching memory: A survey. Electronics 2015; 4(3): 586–613. doi: 10.3390/electronics4030586
18. Yuan FY, Deng N, Shih CC, et al. Conduction mechanism and improved endurance in HfO2-based RRAM with nitridation treatment. Nanoscale Research Letters 2017; 12(1): 574. doi: 10.1186/s11671-017-2330-3
19. Sekhar Reddy PR, Nallagatla VR, Kumar YA, Murali G. Enhanced resistive switching properties of HfAlOx/ZrO2-based RRAM devices. Progress in Natural Science: Materials International 2022; 32(5): 602–607. doi: 10.1016/j.pnsc.2022.09.013
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